High mobility SiC MOSFETs using an oxidation-minimizing process

Abstract We report high channel mobility in 4H-SiC (0001) MOSFETs fabricated using an oxidation-minimizing process consisting of (i) hydrogen etching, (ii) silane passivation, (iii) amorphous silicon deposition, (iv) low-temperature oxidation, and (v) nitric oxide annealing. A high channel mobility (∼80 cm 2 Vs −1 ) is achieved in ion-implanted channels. Devices are stable under thermal and electric field stress, but the threshold voltages are negative. Our experiments demonstrate a 4.5 × increase in field-effect mobility at body dopings used in commercial power devices.