Advances in InX (X: As, Sb) Quantum Dots Infrared Photodetectors

Abstract Infrared photodetectors exhibit significant applications in the fields, such as the defense military, industry, and consumer electronics. Leveraging the advantages, like adjustable bandgap, high carrier mobility, solution processing ability, and low cost, the InX (X: As, Sb) quantum dots (QDs) emerge as the promising candidate “green” materials for next-generation infrared photodetectors, compared to Hg- and Pb-based infrared QDs. However, the controllable synthesis and improved photoelectric properties of InX QDs are limited by the strong covalent bonding between indium and heavy pnictogens and the high-density surface defects, resulting in device metrics that are yet to match those of their toxic counterparts. In recent years, the synergistic innovations in the synthesis technique, ligand engineering, and device structure design have led to significant improvements in the performance of InX QDs infrared photodetectors. This review focuses on the advances of InX QDs-based infrared photodetectors. Firstly, various synthetic methods of InX QDs are reviewed. Secondly, the performance optimization strategies (synthesis process optimization, surface passivation, and device structure design) of InX QDs infrared photodetectors are discussed in detail. Finally, the challenges and prospects for future research in InX QDs infrared photodetectors are proposed. Through a comparative analysis of the InAs and InSb QDs systems, this review establishes a clear “material-to-device” optimization path to unlock the full potential of InX QDs photodetectors and accelerate the development of stable, efficient, and eco-friendly infrared devices.