Advances in PbX (X = S, Se, Te) Quantum‐Dot Photodetectors

Abstract Lead chalcogenides quantum dots (PbX (X = S, Se, Te) QDs) have become promising materials for the next generation of uncooled infrared photodetectors due to their excellent bandgap tunability, solution processability, and cost‐effective manufacturing. Despite significant advancements in controllable synthesis and device engineering, the absence of a comprehensive comparative analysis of their synthetic methods and optoelectronic devices has hindered further development in this field. In this review, an overview of the latest advancements in PbX QDs materials and photodetectors is provided. First, the synthesis methods of PbX QDs are introduced, and their respective advantages and limitations are analyzed. Second, regarding the two core optimization strategies for PbX QDs photodetectors, namely the construction of heterojunction and the design of functional layers, the comprehensive discussions are conducted from three aspects: device fabrications, working mechanisms, and optoelectronic performances. Third, various applications of PbX QDs photodetectors are summarized, including smart furniture, medical and health, and security monitoring. Finally, a comparative analysis of PbX QDs materials and photodetectors is conducted, and their challenges and prospects are discussed. This review aims to provide valuable insights for future research on PbX QDs photodetectors, including material selection and synthesis, device optimization, and application scenarios.