L. Fasselt, P. Behera, D.V. Berlea, D. Bortoletto, C. Buttar, T. Chembakan, V. Dao, G. Dash, S. Haberl, T. Inada, F.K. Isik, P. Jana, X. Li, L. Li, H. Pernegger, P. Riedler, W. Snoeys, C.A. Solans Sánchez, A. Swoboda, I. Turk Cakir, M. van Rijnbach, M. Vázquez Núñez, A. Vijay, J. Weick, S. Worm
Abstract A fast simulation method is presented for a depleted monolithic active pixel sensor, which uses a data driven parameterization of the charge collection and propagation. This approach provides an efficient alternative to TCAD simulations, particularly for sensors whose proprietary process details — such as doping profiles or implant geometries — are unavailable. Data was obtained with a MALTA2 sensor fabricated in a 180 nm CMOS imaging technology on 30 µm epitaxial silicon using the MALTA beam telescope at CERN SPS. The model reproduces the measured in-pixel efficiency with high accuracy and enables a realistic yet computationally lightweight analog pixel simulation. This method will be further employed in optimizing the digital sensor design for applications in high-rate particle tracking and high-granularity calorimetry.