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◆ The Journal of Physical Chemistry C2026-06-02· Permeation

Hydrogen Radical Permeation Dynamics through Ultrathin ALD Al <sub>2</sub> O <sub>3</sub> Layers Revealed by In Situ Ellipsometry

Weihua Wu, Robbert W. E. van de Kruijs, Dirk J. Gravesteijn, Z.S. Houweling, Giorgio Colombi, Alexey Y. Kovalgin

原始摘要(英文原文)· Original abstract
This work focuses on the behavior of hydrogen permeation through ultrathin aluminum oxide (Al 2 O 3 ) layers upon exposure to hydrogen radicals (H*), based on the permeation dynamics revealed by in situ spectroscopic ellipsometry (SE). This work first demonstrated the feasibility of using real-time in situ SE measurements to differentiate between hydrogenation and oxidation processes of Hf in Pd-capped Hf (Pd/Hf) stacks with and without an atomic layer-deposited (ALD) Al 2 O 3 cap. Without applying an Al 2 O 3 cap on top of the stack, all 450 °C H* exposures led to both hydrogenation and oxidation of the Hf layer. The oxidation was presumably triggered by the residual oxidants present in the system. With increasing Al 2 O 3 thickness, a stronger retardation of both hydrogenation and oxidation of Hf was observed, consistent with ex situ X-ray diffractometry and elastic recoil detection analysis (ERDA) results. The application of an ALD Al 2 O 3 layer of a thickness of 1.8, 2.7, and 4.2 nm on the Pd/Hf stacks slowed down hydrogen permeation from H* by a factor of 48, 514, and 4751, respectively. The method demonstrated here can be used for screening other material candidates as potential H* permeation barriers. The hydrogen diffusion length ( L ) in ALD Al 2 O 3 is further obtained at 450 °C in an assumed steady-state permeation regime. Specifically, an exponential decay of the hydrogen permeation flux derived from ERDA measurements is observed with increasing Al 2 O 3 thickness, which is well described by L = 0.48 ± 0.05 nm. Further analysis using the reported values from higher temperatures reveals that hydrogen diffusion length exhibits Arrhenius-type behavior with an activation energy of 0.57 ± 0.02 eV, indicating a thermally driven diffusion of H* through the ALD Al 2 O 3 layers. These results are relevant for applications in which surfaces are exposed to a flux of active hydrogen species, like in extreme ultraviolet (EUV) lithography and fusion reactors.
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Hydrogen Radical Permeation Dynamics through Ultrathin ALD Al <sub>2</sub> O <sub>3</sub> Layers Revealed by In Situ Ellipsometry — 科研速览 Science Skim