Wenjuan Su, Liuyu Lin, Jinyu Ye, Hao Wang, Yibin Lin, Tailiang Guo, Xiongtu Zhou, Chaoxing Wu, Yongai ZHANG
ABSTRACT Micro light‐emitting diodes (Micro‐LEDs), which stand out for their high brightness, broad color gamut, quick response, and low power consumption, are revolutionizing the display and optoelectronic industries. They are ideal for applications like high‐resolution displays, optical communication, augmented reality/virtual reality (AR/VR), and intelligent sensing systems. Nevertheless, there are still issues with accurate current control, pixel scaling, and economical driving. By enabling voltage‐driven operation, simplifying structures, and enhancing reliability, the integration of Micro‐LEDs with field‐effect transistors (FETs) offers an effective solution. Leveraging advanced material technologies such as 2D transition metal dichalcogenides (e.g., MoS 2 ) and gallium nitride (GaN), this review examines an LED integration scheme that traces the evolution from conventional LEDs to Micro‐LEDs, nanopillar LEDs, and their combination with nano‐emission‐area transistors to enhance transistor performance and light‐emission efficiency. This review further examines the development and challenges of monolithic integration between Micro‐LEDs and FETs, highlighting advances in light‐emission efficiency, interconnect resistance, and modulation bandwidth, as well as issues related to material compatibility, fabrication processes, and driving mechanisms. It also underscores the transformative potential of this integration in optoelectronics, elucidating its applications in optical communication, interconnects, and optoelectronic logic circuits while outlining directions for future research.