Integration and electrical evaluation of WS2 and MoS2 fets in a 300 mm pilot line

2D materials have the potential to extend and augment the CMOS scaling roadmap. However, upscaling from lab-based demonstrators to 300 mm-compatible integration modules presents unique challenges. In this work, we address these challenges through a 2D FET process flow developed within imec's 300 mm Si pilot line. FETs with monolayer 2D transition metal dichalcogenide (TMDC) channels are fabricated, and the flow serves as a research vehicle to advance 300 mm-compatible integration modules, including TMDC growth, transfer, cleaning, gate stack deposition, and contact optimization. Key integration challenges arising from the weakly van der Waals-bonded 2D materials are identified, and the motivation behind specific process choices is discussed in the context of fab-specific contamination control. The processing is followed by a rigorous electrical characterization with dedicated test structures to evaluate the FET performance metrics, gate stack scalability, device yield, variability, reliability and stability. This paper provides, for the first time, a comprehensive and systematic description of our 300 mm fab-compatible integration flow for planar 2D FETs, broken down into its individual process modules and supported by a full electrical evaluation. Supplementary Information: The online version contains supplementary material available at10.1007/s44291-026-00164-4.