Spin‐Orbit Torque Controlled Large Antisymmetric Magnetoresistance in van der Waals Fe ₃ GaTe ₂ /Fe ₃ GeTe ₂ Bilayer Heterostructure

ABSTRACT Antisymmetric magnetoresistance shows strong potential in multi‐state memory, logical circuits, and high‐performance computing. However, the weak magnetoresistance effect and difficulty in manipulation remain as major challenges to practical applications. Emerging van der Waals (vdW) magnets offer promising candidates to overcome the neckbottle. Here, we report the first demonstration of spin‐orbit torque (SOT) controlled antisymmetric magnetoresistance effect in vdW Fe 3 GaTe 2 /Fe 3 GeTe 2 heterostructure. Spin‐orbit coupling induces spinmomentum locking at the Fe 3 GaTe 2 /Fe 3 GeTe 2 interface, contributing to the antisymmetric magnetoresistance phenomenon. The shape of antisymmetric magnetoresistance can be highly tunable by current. Surprisingly, current‐induced SOT fields are significantly large at low temperatures. In addition to the intrinsic SOT in nano‐ferromagnet, the quantitative analysis indicates that the spinmomentum locking can generate a sizable spin current, which results in a large interfacial SOT and magnetoresistance ratio. Based on multiple tunable magnetoresistance states and non‐volatility, a compute‐in‐memory processor is constructed, which achieves high performance in image classification and cryogenic qubit state discrimination. These results mark an important step in advancing the antisymmetric magnetoresistance effect toward energy‐efficient spintronic devices.