Jinlong Gou, Gaomeng Hou, Yuhao An, Shizhe Wu, Mengfan Zhao, Yingxin Shao, Wenwen Ma, Minnan An, Tao Zhu, Yue Ji, Ping Wang, Zedong Xu, Anmin Nie, Yali Xie, Zhiyan Jia, Zhicheng Wang, Delin Zhang, Yong Jiang
Two-dimensional van der Waals magnetic materials offer a promising platform for next-generation spintronic devices, yet achieving fully reversible and low-power voltage control of magnetization switching remains challenging. In this work, a quasi-nonvolatile and fully reversible electrical manipulation of perpendicular magnetic anisotropy is demonstrated in a horizontally-asymmetric Fe3GaTe2/CuInP2S6 van der Waals heterostructure at room temperature. By leveraging the in-plane migration and accumulation of Cu ions in CuInP2S6 under ultralow voltage pulses (0.9 V, ~16.66 kV/m), reversible modulation of the magnetic properties in the adjacent Fe3GaTe2 layer is achieved. Anomalous Hall effect and magneto-optical Kerr effect measurements confirm a cyclically stable modulation of the magnetic states, demonstrating a remarkably high voltage-controlled magnetic anisotropy coefficient (~1.0 × 106 fJ/V·m). Furthermore, it is demonstrated that the heterostructure, when integrated with spin-orbit torque devices, enables both voltage-controlled magnetic anisotropy and field-free switching of magnetization. This work provides a viable path toward energy-efficient two-dimensional spintronic devices.