Luming Chen, Zhilin Wei, Shenglin Ma, Yan Chen, Yihan Xie, Chunlei Li, Shuwei He, Hai Yuan
Through Glass Via (TGV) technology has emerged as a promising solution for advanced packaging. While glass offers lower dielectric loss than silicon, its lower thermal conductivity raises concerns about electro-thermal coupling effects in high-power, high-frequency applications. Therefore, this study conducted an electro-thermal co-design of TGV grounded Coplanar Waveguide (CPW) and Radio Frequency (RF) TGV connected CPW structures. A high-power test platform was developed to investigate the electrical and thermal performance of these structures. The temperature distribution mechanism under high-power conditions was revealed. Under high power and high frequency, the decrease in surface conductivity affected by surface state and film layer composition leads to increased loss, triggering temperature rise and forming an electrothermal coupling loop. Under continuous wave operation (5-20 W), the temperature rise reaches 92.4 °C while insertion loss increases by only 0.4 dB. Under pulsed wave operation (25-100 W, 2.5% duty cycle), the temperature rise is merely 2.1 °C with insertion loss increasing by 0.3 dB. The quadruple-redundant design and reduces heat flux density, preventing localized hotspot formation. The pulse intervals suppress thermal accumulation, leading to lower temperature rise. Therefore, continuous wave applications should prioritize thermal management, while pulsed wave applications can focus on electrical performance optimization.