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◆ Energies2026-05-08· Insulated-gate bipolar transistor

Modeling Methods for Internal Transient Processes of Controllable Line-Commutated Converters Under AC Voltage Disturbance

Mengting Yang, Zhaoxin Du, Wenbin Zhao

原始摘要(英文原文)· Original abstract
A Controllable Line-Commutated Converter (CLCC) is a novel piece of equipment for enhancing the commutation failure resistance of High-Voltage Direct Current (HVDC) transmission systems. Traditional lumped parameter models ignore the high-frequency coupling effects of internal distributed stray capacitances, resulting in insufficient transient simulation accuracy and restricting refined engineering design. Taking the CLCC in the HVDC transformation project as the research object, this paper analyzes the distribution characteristics of stray parameters in a press-pack Insulated Gate Bipolar Transistor (IGBT) under stacked structures. By integrating distributed stray parameter networks with the nonlinear characteristics of the devices, an improved IGBT equivalent circuit model is established, with key parameters identified based on field-measured data. Furthermore, an LCC-CLCC simulation model is built and used to replace the improved IGBT model to conduct short-circuit fault simulation verification. The results demonstrate that the high-fidelity model accurately reproduces transient waveforms under Alternating Current (AC) voltage disturbance and faithfully reflects the actual operating characteristics of a surge arrester and IGBT, thereby effectively compensating for the idealized errors inherent in traditional models. This modeling methodology provides a robust theoretical and simulation foundation for parameter optimization, valve control system design, and the secure operation of a CLCC.
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Modeling Methods for Internal Transient Processes of Controllable Line-Commutated Converters Under AC Voltage Disturbance — 科研速览 Science Skim