GaN HEMTs for Electric Vehicle Power Electronics: Device Architectures, Reliability and Next-Generation Wide Bandgap Opportunities

The accelerating adoption of electric vehicles (EVs) is driving the demand for next-generation wide-bandgap (WBG) power devices that can deliver high efficiency, high power density, and robust operation under stringent electrical and thermal stress. Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have emerged as a leading WBG technology due to their high breakdown voltage, ultrafast switching capability, and low conduction and switching losses relative to silicon devices, enabling high-performance EV power converters such as on-board chargers, DC-DC converters, and traction inverters. This review provides a comprehensive device-level assessment of GaN HEMTs, emphasizing advanced device architectures, state-of-the-art discrete transistors, and their implications for high-frequency, high-efficiency power conversion. Critical performance and reliability challenges, including current collapse, self-heating, and gate degradation, are analyzed in the context of their physical mechanisms and operational behavior under realistic conditions such as elevated junction temperatures, high switching frequencies, and dynamic load profiles. Furthermore, emerging opportunities in ultra-wide-bandgap semiconductor technologies beyond GaN are discussed, providing insights to guide the design, optimization, and robust integration of WBG devices into next-generation EV power electronic systems.