Effects of Reactive Pressure on Hot-Filament Chemical Vapor Deposition Diamond Films’ Growth on Surfaces of Polycrystalline Diamond Substrates

Hot-filament chemical vapor deposition (HFCVD) facilitates the realization of industrial mass production owing to its simple synthesis device, facile control of process conditions, and low preparation cost. Reactive pressure is one of the deposition parameters that exert a profound influence on the growth of HFCVD diamond films on polycrystalline diamond (PCD) substrates, primarily affecting the growth rate and grain size of the deposited diamond coating. A univariate experimental approach was employed to investigate the effects of reactive pressure (2 kPa, 3 kPa, 4 kPa, 5 kPa) on the properties of as-deposited diamond films. The results show that with the increase in reactive pressure, the growth rate increased first and then decreased, peaking at 5.366 μm/h at 3 kPa. The fractal dimension and grain size follow a similar variation trend, both decreasing first and then increasing. The grain size drops to 15.8 nm when the reactive pressure is 3 kPa, at which point the adhesive strength of the film is maximized. This phenomenon can be attributed to the fact that excessively low reactive pressure extends the mean free path of particles and active species, endowing them with higher kinetic energy and reducing collision-induced energy loss. This in turn significantly promotes diamond nucleation, secondary nucleation and grain refinement, thus facilitating the growth of nanocrystalline diamond. In contrast, an excessively high pressure yields the opposite effect, inhibiting nucleation and promoting grain coarsening.