Sentaurus TCAD input decks and extracted characteristics for dual-gate monolayer MoS2 TFTs with ferroelectric HZO gate stacks

Sentaurus TCAD input decks and extracted characteristics for dual-gate monolayer MoS2 TFTs with ferroelectric HZO gate stacks Authors: S. K. Dargar, A. Dargar, S. Birla Software: Synopsys Sentaurus TCAD W-2024.09-SP1 (commercial, licensed) Related manuscript: "Capacitive design trade-offs in dual-gate monolayer MoS2 thin-film transistors..." (submitted) CONTENTS Input decks (.cmd): sde_dvs.cmd device structure + mesh (Sentaurus Structure Editor) sde_Lsweep.cmd parameterized structure for TLM channel-length sweep qm_des.cmd quantum-corrected baseline transfer sweep -> Figs 3 out_des.cmd output characteristics (5 gate biases) dibl_des.cmd transfer at VDS=0.05/1.0 V -> DIBL dit_des.cmd interface-trap sweep template (edit Conc) -> Fig 6 vbg_des.cmd bottom-gate bias family -> Fig 7 mfm_sde.cmd, mfm_des.cmd MFM capacitor, HZO P-E calibration -> Fig 4(7) nc_des.cmd coupled ferroelectric attempt (Sec. on numerics) MoS2_Graphene_Bi.par custom material parameters (MoS2 as overridden Si) Extracted data (.txt, two columns unless noted): idvg_baseline_DD.txt, idvg_QM_fine.txt V_GS(V) I_D(A/um) idvg_dit_1e10..1e13.txt trap sweep transfers vbg_full.txt V_GS I_D V_BG dibl_lo.txt, dibl_hi.txt V_GS I_D at VDS=0.05/1.0 V pe_r1..r3.txt P(C/cm^2) E(V/cm), MFM loop REPRODUCTION: run sde on the structure deck, then sdevice on any device deck, in a directory containing MoS2_Graphene_Bi.par. Note: sdevice appends "_des.log" to Output filenames on this version.