Naoki Nagahama, Kaito Nishimiya, Shunya Yamamoto, Hayato Yazawa, Yuta Takai, Chisato Tanaka, Kazuyuki Sakaue, Atsushi Sunahara, Gerry O'Sullivan, Shinichi Namba, Takeshi Higashiguchi, Eiji J Takahashi
The upscaling of extreme ultraviolet (EUV) source power for next-generation lithography demands higher conversion efficiency (CE) at reduced per-pulse energies. We demonstrate a 40% EUV CE enhancement by simultaneous dual-beam irradiation of a planar Sn target with a 2090-nm, 20-ns Ho:YAG laser. Single-beam irradiation at 40 mJ yielded an EUV CE of 2.6%; splitting the same total energy equally into two beams of 20 mJ each, at identical peak intensity, raised the EUV CE to 3.6%, which is the highest, to the best of our knowledge, reported for 2-μm-driven laser-produced plasma sources by the Sn planar target. The EUV source size (60-70 μm) was nearly identical across both configurations. Because the scheme requires only passive beam splitting and scales readily to three or more beams, it offers a practical route toward multi-kW-class, energy-efficient EUV sources for high-NA and hyper-NA lithography.