Tiantian Luan, Liwen Sang, Yi Long, Yumeng Zhou, Lingfeng Ye, Yabing Li, Ziling Cai, Yutao Fang, Kun Ba, Jianlu Wang
The ultraviolet (UV) and near-infrared (NIR) dual-band photodetectors are attractive for low-power multispectral sensing. However, conventional III-nitride-based dual-band detectors are either limited to UV-visible response or rely on external bias. Here, we report a self-powered UV-NIR dual-band photodetector based on a p-PbS-EDT/n-InGaN heterojunction. Driven by the intrinsic built-in electrical field, the device exhibits distinct zero-bias responsivities of 260.19 mA⋅W-1 (385 nm) and 6.95 mA⋅W-1 (940 nm), with corresponding specific detectivities of 6.38 × 1010 and 1.70 × 109 Jones, respectively. Systematic electrical transport analysis reveals the response mechanisms of NIR and UV. This work establishes the non-epitaxial heterointegration as a route toward zero-power-consumption multispectral photodetectors for emerging applications.