Structural and Electrical Properties of n- and p-type Silicon and Tellurium-doped Silicon after 2 MeV Electron Irradiation

The formation of the cubic silicon phase (sp.gr. $$Fd\bar {3}m$$ ) was confirmed in n- and p-type silicon samples, as well as in n- and p-type tellurium-diffused silicon samples annealed for 5 h. Electron fluences of 1 × 1015, 1 × 1016, and 1 × 1017 electrons/cm2 resulted in changes to the lattice parameters of the cubic silicon phase (sp.gr. $$Fd\bar {3}m$$ ). While the phase composition of the initial and electron-irradiated samples remained essentially unchanged, irradiation led to noticeable variations in the nanocrystallite size. Hall effect measurements revealed that the resistivity of all samples increased as a function of electron fluence, and the corresponding results are presented. The resistivity of p-type silicon increased from 16.27 to 1042 Ω · cm with increasing electron fluence, while in tellurium-doped p-type samples it increased from 22.40 to 815 Ω · cm. For n-type silicon, the resistivity increased from 15.71 to 594.56 Ω · cm, whereas in tellurium-doped n-type samples it varied from 13.68 to 118 000 Ω · cm.