Rajesh Kumar Jha
Abstract The photovoltaic (PV) industry is dominated by crystalline silicon (c-Si) solar cells because of their stability, availability, and advanced production technology. Surface recombination, however, continues to be a significant barrier to any efficiency improvement. In order to reduce recombination losses, increase carrier lifetime, and improve important performance metrics lik e open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and overall power conversion efficiency (PCE), surface passivation that can be achieved through chemical and field-effect mechanisms is essential. Silicon dioxide (SiO2), silicon nitride (SiNx:H), aluminum oxide (Al2O3), hydrogenated amorphous silicon (a-Si:H), and hafnium oxide (HfO2) are just a few of the passivation materials that are thoroughly examined in this review, along with newer options like transition metal oxides and two-dimensional materials. To illustrate the usefulness of passivation in large-scale manufacturing, industrial designs such as passivated emitter and rear cell, tunnel oxide passivated contact, and heterojunction with intrinsic thin layer are analysed. Lastly, the article highlights future prospects such tandem integration, hybrid passivation stacks, and sustainable processing while outlining present issues in thermal stability, scalability, and long-term dependability.