An Accurate Datasheet-Driven Analytical Model of SiC MOSFET Incorporating Stage-Dominant <i> C _gs </i> ( <i> V _gs </i> , <i> V _d _s </i> ) and <i> C _gd </i> ( <i> V _gs </i> , <i> V _d _s </i> )

SiC MOSFET analytical models demonstrate higher computational efficiency and simpler implementation than physical/behavioral models. However, existing analytical models fail to properly account forVgs-dependentCgs/Cgddynamics, causing significant errors in switching waveform predictions and switching characteristic parameters (dids/dt,dvds/dtandtdelay). Current SiC MOSFET analytical models implementCgsandCgdcharacterization through either lookup tables or parameterized mathematical expressions, where certain parameters require additional experimental data. This paper presents an accurate analytical model for SiC MOSFETs. This model provides physics-based expressions forCgs(Vgs,Vds) andCgd(Vgs,Vds), derived from charge-potential theory and simplified to capture the dominant capacitance dynamics in each switching Stage. Parameter extraction is performed exclusively using datasheet information. Experimental verification shows <10% loss prediction error, compared with 15-45% in existing analytical models. The model's universality has been validated using C3M0016120D, enabling converter optimization, dead-time control and snubber design.