A Novel TSV Model With Fault Characterization for High-Frequency Transmission in 3D ICs

Through-silicon vias (TSVs) are essential for 3D integrated circuits (ICs) and advanced chiplet packaging. The semiconductor industry is transitioning toward 3D ICs, chiplets, and system-in-package (SiP) solutions due to the slowdown of Moore’s Law and limitations in conventional silicon scaling. In this paper, we propose an optimized TSV architecture for high-frequency transmission to enhance its suitability for 6G communication chips, and develop a comprehensive equivalent circuit model for fault-free and faulty TSVs. This model accounts for open-circuit and short-circuit fault conditions while considering the effects of higher frequencies, substrate type, doping concentration, and adjacent layers. At the physical level, the TSVs are simulated using the Ansys High-Frequency Structure Simulator (HFSS), and the equivalent circuits are designed using the Cadence Virtuoso tool. An experimental evaluation is also conducted to validate the physical design. We position the TSVs in a pattern of ground-signal-ground (G-S-G) to reduce the effective inductance of the signal TSV, thereby minimizing inductive reactance at ultra-high frequencies. Consequently, the reflection coefficient remains below -10 dB across the frequency range of 0.1 to 146.3 GHz. Furthermore, we compare simulation outcomes from HFSS and Cadence for both fault-free and faulty TSVs under varying operating conditions. Additionally, the parasitic circuit components are characterized through extensive theoretical derivations for in-depth circuit verification. Collectively, the rigorous analysis, experimental validation, and thorough investigation of the proposed design and its equivalent circuit demonstrate their potential for use in creating datasets for a fault prediction machine learning model.