Near-Infrared Photodetectors and Optoelectronic Logic Gates Based on CVD-Grown Sb ₂ (S _1/3 Se _2/3 ) ₃ Nanoribbons

Optoelectronic logic gates (OELGs), the building blocks of in-sensor computing, have attracted increasing attention owing to their ability to eliminate redundant data and reduce power consumption. As OELGs are photodetector-based, their logic reliability and stability are determined by photodetector performance. In this work, high-quality Sb2(S1/3Se2/3)3nanoribbons with an average length of 15 μm have been grown via chemical vapor deposition. The photodetector based on the grown nanoribbon shows desirable and stable performance under near-infrared (NIR) laser at 1 V, with a responsivity of 312.2 mA/W, a detectivity of 2.88×1010Jones and an external quantum efficiency of 49.62%. Notably, the high on/off ratio (143), fast response (5.07 ms/5.18 ms) and good long-term air stability indicate the potential for OELGs. By using the electrical properties of the nanoribbons in series and parallel connections, four OELGs operating in NIR region are demonstrated to realize fundamental Boolean logic operations (AND, OR, NOT, NOR), confirming the strong potential of Sb2(S1/3Se2/3)3nanoribbons for next-generation intelligent optoelectronic systems.