Arif Rahman, Forrest Valdez, Viphretuo Mere, Camiel Op de Beeck, Pieter Wuytens, Shayan Mookherjea
This work achieves the desirable combination of low-pressure chemical vapor deposition silicon nitride (SiN) multi-layer photonic integrated circuits (PICs) with high-performance thin-film lithium niobate electro-optic (EO) modulators, made in a scalable foundry fabrication process using conventional low-resistivity silicon wafers. Operational parameters such as bandwidth, voltage, insertion loss and extinction ratio are reported for representative EO Mach-Zehnder modulator devices. The EO devices are seamlessly connected to low-loss SiN waveguides which have been used for superior performance in a wide range of PIC applications.