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◆ Physical Review Letters2026-02-06· Physics

Observation of Quasisteady Dark Excitons and Gapped State in a Doped Semiconductor

Shangkun Mo, Yunfei Bai, Chunlong Wu, Xingxia Cui, Guangqiang Mei, Qiang Wan, Renzhe Li, Cheng Peng, Keming Zhao, Dingkun Qin, Shuming Yu, Hao Zhong, Xin Wang, Enting Li, Yiwei Li, Limin Cao, Min Feng, Sheng Meng, Nan Xu

原始摘要(英文原文)· Original abstract
Excitons underpin optical phenomena and can intertwine with correlated electronic states. Unlike bright excitons, dark excitons evade conventional optical detection, and their impact on quasiequilibrium electronic structures remains largely unexplored. Here, using angle-resolved photoemission spectroscopy, we report creating, detecting, and controlling dark excitons in the quasiequilibrium distribution of a doped semiconductor SnSe_{2}. By tuning doping and temperature, we control the excitonic spectral weight and observe a concomitant anisotropic gapped state. Our results broaden the scope of dark excitons beyond ultrafast photoemission studies and highlight a correlation between dark excitons and correlated electrons under quasiequilibrium conditions.
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Observation of Quasisteady Dark Excitons and Gapped State in a Doped Semiconductor — 科研速览 Science Skim