San‐Dong Guo, Shaobo Chen, Guangzhao Wang
Fully compensated ferrimagnets exhibit zero-net-magnetic moments yet display nonrelativistic global spin splitting, making them highly advantageous for constructing high-performance spintronic devices. The general strategy is to break the inversion symmetry of conventional antiferromagnets or the rotational/mirror symmetry of altermagnets to achieve fully compensated ferrimagnets. Here, we propose to induce fully compensated ferrimagnetism by engineering the spin ordering rather than modifying the lattice structure. Bilayer stacking engineering offers a convenient platform to verify our proposal and readily enables switching between two distinct electronic states by tuning the N\'eel vector of one layer. By first-principles calculations, a bilayer system is constructed with monolayer ${\mathrm{Cr}}_{2}{\mathrm{C}}_{2}{\mathrm{S}}_{6}$ as the elementary building block to corroborate our proposal. This strategy can also be extended to inducing altermagnetism via spin ordering engineering. Our work offers an alternative route to realize nonrelativistic spin splitting in zero-net-magnetization magnets, paving the way for the advancement and construction of low-power spintronic devices.