Tunneling magnetoresistance in a junction made of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>X</mml:mi> </mml:math> -wave magnets with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>X</mml:mi> <mml:mo>=</mml:mo> <mml:mi>p</mml:mi> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>d</mml:mi> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>f</mml:mi> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>g</mml:mi> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>i</mml:mi> </mml:math>
Motohiko Ezawa
原始摘要（英文原文）· Original abstract
We investigate the tunneling magnetoresistance (TMR) of a bilayer system made of X -wave magnets with X = p , d , f , g , i , where X = d , g , i corresponds to altermagnets. A universal analytic formula is derived for the TMR ratio. It is proportional to | J | / ( N X Γ ) for small Γ , where N X is the number of the nodes of the X -wave magnet, J is the strength of the X -wave magnet, and Γ is the self-energy. It is contrasted with the TMR ratio made of ferromagnets, where it is proportional to J 2 / Γ 2 for small Γ . Therefore, the TMR ratio is larger in ferromagnets for | J | > Γ . However, the X -wave magnets are expected to achieve high-speed and ultradense memory owing to the zero net magnetization.