Fei Wang, Xuanxi Cai, Wanying Chen, Jiangbo Lu, Tianshuang Sheng, X. Tang, J. Li, Hongyun Zhang, Shuyun Zhou
Abstract Floquet engineering provides an emerging pathway for tailoring the electronic states of quantum materials through time-periodic drive. A critical step along this direction is achieving light-induced modifications of the dynamical electronic structure, such as avoided-crossing gap at the Floquet Brillouin zone boundary, via efficient coupling of electrons with the coherent light-field. Here, we report robust Floquet-induced gap in bulk graphite that persists despite the presence of interlayer coupling and photo-excitation. Using time- and angle-resolved photoemission spectroscopy with intense mid-infrared pumping, we directly reveal Floquet-induced gaps at resonance points both in the valence and conduction bands, accompanied by coherent Floquet sidebands. The gap and sidebands coexist with photo-excited carriers, yet their distinct timescales allow us to disentangle their origins. Our demonstration of robust Floquet-induced gaps establishes graphite as a platform for coherent manipulation of Dirac fermions and realization of light-engineered quantum phases.