Advanced fractional photo-thermo-viscoelastic model for rotating semiconductor cylindrical structures under thermal and optical loads

This study introduces a novel framework for modeling viscoelastic semiconductor materials using a fractional Kelvin–Voigt model combined with Atangana–Baleanu fractional derivatives. The fractional operator, based on a generalized Mittag–Leffler kernel, accurately captures nonlocal and hereditary material properties, addressing limitations of traditional models. Additionally, a nonlocal Moore–Gibson–Thompson (MGT) heat equation, incorporating a thermal nonlocal parameter, models finite thermal and photothermal wave propagation speeds essential for high-frequency and ultra-short laser pulse applications. The analysis examines a rotating semiconductor with a cylindrical cavity, exploring the interplay of photo-thermoelastic, viscoelastic, and rotational effects under a constant magnetic field and optical thermal transfer. Governing equations are formulated in the Laplace transform domain and solved numerically using Fourier series expansions. The results reveal how fractional-order parameters, relaxation coefficients, thermal nonlocality, and rotational velocity affect temperature, displacement, stresses, and carrier density. These findings underscore the importance of fractional calculus and nonlocal effects in improving predictions of dynamic behavior under extreme conditions. By overcoming shortcomings of classical and generalized models, this work provides a foundation for optimizing semiconductor device designs, with applications in renewable energy and advanced electronics.