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◆ Applied Physics Letters2026-05-11· Optoelectronics

Preparation of flexible inverted metamorphic four-junction AlGaInP/AlGaAs/GaAs/In0.16Ga0.84As quantum well solar cells

Z H Chen, Wencong Yan, Xinyi Li, JL Long, Qiangjian Sun, Min Zhou, Xiaoxu Wu, Menglu Yu, Qing Gong, Erpeng Li, Wenhao Miao, Changwu Ge, Shulong Lu

原始摘要(英文原文)· Original abstract
To achieve high efficiency in five-junction solar cells under a space spectrum, it is essential to precisely adjust the subcells' bandgap to achieve optimal spectral matching. In this work, strain-balanced quantum wells (QWs) are employed to fine-tune the bandgap combination of inverted metamorphic (IMM) four-junction solar cells, which are based on the top four junctions of IMM five-junction solar cells. The 60-period QWs expand the absorption spectrum of the current-limited GaAs subcell to longer wavelengths, resulting in an external quantum efficiency of 48%. The short-circuit current density of the GaAs subcell increased from 10.283 to 11.171 mA/cm2. Consequently, the maximum current mismatch of the four-junction solar cells decreased from 12.2% to 4.6%. We have successfully prepared a flexible four-junction solar cell with a photoelectric conversion efficiency of 30.14% (8 cm2, AM0 spectrum), an open-circuit voltage of 4.347 V, and a retention rate of bending test performance that is over 99%. Based on the performance parameters of the four-junction QW cells, we estimate that the efficiency of the flexible five-junction solar cells prepared on this basis will be further improved.
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Preparation of flexible inverted metamorphic four-junction AlGaInP/AlGaAs/GaAs/In0.16Ga0.84As quantum well solar cells — 科研速览 Science Skim