High-κ Mn3O4 interfacial engineering enables mobility enhancement in MoS2 transistors.

Molybdenum disulfide (MoS2) field-effect transistors (FETs) are core candidates for post-Moore era electronic devices. However, interface defect-induced Coulomb scattering and hysteresis effects have long hindered the improvement of performance and stability. Here, we propose a dual-interface engineering strategy using a chemical vapor deposition (CVD)-grown Mn3O4 high-κ dielectric, constructing SiO2/MoS2/Mn3O4 devices to achieve synergistic regulation and investigation of interface scattering mechanisms and trap dynamics. We suggest the Mn3O4 dielectric interface hosts two distinct trap states: an extremely shallow one (0.068 eV) and a deep one (0.247 eV). The parallel-plate capacitors yield an effective out-of-plane dielectric constant of κeff ≈ 39, and the gate-leakage-current density remains predominantly 10-6-10-5 A cm-2 over ±10 V. The integration of Mn3O4 modifies the dielectric and trapping environments of the MoS2 channel and increases the apparent two-terminal field-effect mobility of the dual-interface device to approximately 30 cm2 V-1 s-1 at room temperature (RT). These transport changes are consistent with modified dielectric screening and trap dynamics rather than a unique microscopic scattering mechanism, while different trap-response time scales enable reversible hysteresis and hysteresis crossover. Overall, CVD-grown single-crystalline Mn3O4 provides a suitable platform for investigating dielectric-environment and dual-interface effects in MoS2 transistors.