◆ Journal of Materials Chemistry A2026-01-01· Materials science
Defect passivation by annealing enables stable transport in Li-doped Mg <sub>2</sub> Sn epitaxial films for microfabricated thermoelectric devices
Kenneth Magallon Senados, T. Aizawa, I. Ohkubo, Masayuki Murata, Takahiro Baba, Akihiko Ohi, Akira Uedono, Takeaki Sakurai, Takao Mori
原始摘要（英文原文）· Original abstract
Post-growth annealing suppresses defect-driven instability in Li-doped Mg 2 Sn epitaxial thin films, increasing mobility and power factor. Stable p-type transport translates to improved micro-TE device output.
Defect passivation by annealing enables stable transport in Li-doped Mg <sub>2</sub> Sn epitaxial films for microfabricated thermoelectric devices — 科研速览 Science Skim