Enhanced photoresponsivity and photodetectivity by Sb doping into Bi ₂ Se ₃ thin films for visible light photodetectors

Jones with annealing at 250 °C. The nA to mA transition in photocurrent upon annealing at 250 °C increased the photoconductivity. The resulting experimental data indicate the potential of such types of films for application in advanced visible light photodetectors and future optoelectronic devices with high energy efficiency and sensitivity.