Thermoelectric and electronic transport properties of thermal and plasma-enhanced ALD grown titanium nitride thin films

) at room temperature was calculated to be 0.0056 for PEALD TiN films which is significantly higher than the value of 0.0002 obtained for thermal ALD TiN films. Our findings provide critical insights into transport properties of TiN, offering guidance for the development of conductive nanolayers in thermoelectric, nanoelectronic, and on-chip cooling applications, where precise control over thermal and electronic behavior is vital, thereby expanding the relevance of ALD TiN in high-performance applications.