Pressure-induced metallization and electronic transition in a two-dimensional ferroelastic semiconductor of Nb <sub>2</sub> SiTe <sub>4</sub> in different hydrostatic environments
not only advance the in-depth understanding of its physicochemical behaviours in other 2D ferroelastic semiconductors but are also beneficial in steering its underlying applications in electronic and photonic devices.
Pressure-induced metallization and electronic transition in a two-dimensional ferroelastic semiconductor of Nb <sub>2</sub> SiTe <sub>4</sub> in different hydrostatic environments — 科研速览 Science Skim