Metal electrodes transfer using polycarbonate for the fabrication of molybdenum disulfide semiconductor devices.

Fabricating high-performance 2D nanosheet-based semiconductor devices faces challenges due to the structural damage caused by traditional metal electrode deposition processes. This study introduces a novel polycarbonate (PC) assisted metal electrode transfer technique that effectively preserves the structural and electronic properties of MoS2 nanosheets. Using the proposed method, metal electrodes are successfully transferred onto MoS2 nanosheets via the shadow mask process (20 μm channel) and photolithography (8 μm and 3 μm channels) for photodetector and field-effect transistor (FET) fabrication, respectively. Photodetectors fabricated with transferred electrodes exhibit stable current-voltage characteristics, with the shadow mask-based photodetector achieving a maximum photoresponsivity of 0.73 µA/W under a 450 nm laser at 10 V bias. The photolithography-based photodetector demonstrates higher photoresponsivity of 3.62 mA/W due to enhanced light absorption. Additionally, the FETs fabricated using the PC transfer process show NMOS behavior with electron mobility values of up to 0.17 cm2/V s during reverse sweeps. PC covered FETs further improve performance under ambient conditions, achieving electron mobility up to 0.517 cm2/V s and stable switching current ratios. These findings underscore the PC assisted electrode transfer method's advantages in maintaining material integrity, achieving stable device performance, and offering scalability for large-scale applications.