Hassan Ul Huzaibi, S. Han, Meng Zhang
This review examines modeling methodologies for amorphous metal oxide thin-film transistors (a-MO TFTs). It covers underlying device physics, charge transport mechanisms including multiple trapping and release, surface potential, mobility, drain current, and capacitance models, alongside bias, temperature, and mechanical stress effects. Comparisons of compact models highlight trade-offs in accuracy, parameter extraction, and circuit-level validation. Future directions emphasize machine learning integration, unified multi-material frameworks, and strain-aware simulations.