Jeong-Han Kim, Wonjun Shin, Ryun-Han Koo, Jangsaeng Kim, Eugene Park, Piush Behera, Sojin Kim, Jinseok Hong, Feras Al-Dirini, Been Kwak, Jiwon You, Jiseong Im, Dooyong Koh, Yejin Hong, Qinyuan Xue, Hyun-Min Kim, Hyunho Seok, Youngchan Cho, Hwiin Ju, W. U. Jung, Kyunghwan Lee, Daewon Ha, Jong-Ho Lee, Seung-Yong Lee, Deok‐Hwang Kwon, Deok-Hwang Kwon, Frances M. Ross, Youngho Kang, Suraj S. Cheema, Daewoong Kwon, Daewoong Kwon
In-memory computing using two-terminal memristors offers a promising route to reduce the energy demands of data-intensive computing. However, current devices scale poorly due to sneak currents and materials that are incompatible with standard complementary metal-oxide-semiconductor and very large-scale integration processes. Here we demonstrate a self-rectifying memristor that unifies resistive switching and diode-like rectification in a single device, a hybrid ferroelectric-ionic tunnel diode fabricated using complementary metal-oxide-semiconductor compatible materials and processes. We harness the collective (ferroelectric-antiferroelectric polymorphism) and defective (ionic) switching behaviors of HfO2 − ZrO2 to synergistically enhance both its electroresistance and rectifying behavior. Furthermore, conformal atomic layer deposition enables the integration of three-dimensional device structures, yielding high on/off (9.3 × 107) and rectifying (1.7 × 106) ratios with a storage capacity of 10 Gb. These results highlight the potential of this device as a hardware building block for scalable in-memory computing platforms. While large-scale memristor arrays hold promise for ever-growing need of data processing, their scalability remains limited. Kim et al. report a hybrid memristor that combines the switching and rectification behaviors of tunnel junctions and diodes, resulting in a storage capacity of 10 Gb.