Xumin Chang, Feng Liu, Feifei Xu, Cheng Xu, Jiayong Xiao, Zheng Sun, Pengfei Jiao, Yixin Zhang, Shaozheng Wang, Bohan Shen, Renjie He, Kenji Watanabe, Takashi Taniguchi, Ruidan Zhong, Jinfeng Jia, Z. Shi, Xiaoxue Liu, Yang Zhang, Di Qian, Tao Li, Shengwei Jiang
, ferromagnetism has been closely linked to integer and fractional Chern insulators, while the true zero‑field ground state can be sensitive to twist angle and vertical electric field. Here we show that devices with intermediate twist angle (~3°) may host antiferromagnetic ordered ground states at fixed hole fillings of 1 and 2/3, evidenced by suppressed zero‑field magneto‑optical and Hall responses and field‑driven transitions into quantized Chern states. By tuning only the vertical electric field, we reversibly switch the system from antiferromagnetism to ferromagnetism accompanied by integer or fractional Chern insulating behavior near the layer‑polarization threshold, and then to a paramagnetic regime at larger fields. These results reveal competing correlated ground states in a single moiré platform and establish electric‑field control of magnetism and topology.