Nikolaos Xenidis, Mehrdad Rezaei Golghand, Nikita I. Raginov, Joachim Oberhammer, Dmitry V. Krasnikov, Albert G. Nasibulin, Dmitry V. Lioubtchenko
Abstract Dielectric waveguides are an emerging platform for terahertz (THz) integrated circuits, but a key challenge for dense integration is the realization of terminations that enable both multi-port device characterization and elimination of electromagnetic interference. Here, we demonstrate a compact, broadband termination by coating silicon waveguides with ultrathin single-walled carbon nanotube (SWCNT) films. Fabricated via a floating-catalyst (aerosol) chemical vapor deposition process, film thicknesses vary from 2 to 53 nm and are characterized in 140-220 GHz. A 53 nm thick film introduces up to 47 dB of attenuation while maintaining over 20 dB reflection loss, confirming nearly reflection-free absorption. Shielding analysis shows absorption dominates over reflection, and a record specific shielding efficiency of 5.5 × 10 9 dB cm 2 g −1 is achieved. This approach offers a footprint-efficient solution for high-density THz circuits without bulky, radiative terminations.