Measuring Hall voltage and Hall resistance in an atom-based quantum simulator

In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and universal manifestations of the Hall effect. However, a direct measurement of the Hall voltage and of the Hall resistance in a non-electronic system of strongly interacting fermions was not achieved to date. Here, we demonstrate a technique for measuring the Hall voltage in a neutral-atom-based quantum simulator. From that we provide the first direct measurement of the Hall resistance in a cold-atom analogue of a solid-state Hall bar and study its dependence on the carrier density, along with theoretical analyses. Our work closes a major gap between analogue quantum simulations and measurements performed in solid-state systems, providing a key tool for the exploration of the Hall effect in highly tunable and strongly correlated systems. The authors report an experimental study of the Hall effect measuring electrical quantities in ultracold fermionic quantum simulators. This provides a way forward in measuring transport properties in these platforms and verifying long-standing theoretical predictions.