Y. S. Lin, Bingchen Liu, Bing-Zhong Hu, Yongfeng Wang, Jing-Tao Lü, Yaping Zang, Daoben Zhu
, driven by the saturation of a single transport channel under ambient conditions. This unprecedented performance arises from electric-field-induced formation of covalent C-Au-C bonds at both contacts, creating atomically fused interfaces that seamlessly merge the nanobelt's π system with Au d orbitals. The resulting d-π conjugation establishes a single, transparent electronic resonance aligned with the Fermi level, suppressing backscattering and enabling near ideal quantum transport. By eliminating heterogeneous interfacial resistance at the atomic scale, this strategy offers a general blueprint for engineering atomically precise, energy-efficient nanoelectronic and optoelectronic devices.