Mengjie Li, Shuang Che, Zhe Yu, Boyi Sun, Chunjing Wang, Yingbo Zhang, Xiufeng Wu, Xueyan Hou, Kexin Wang, Fei Xia, Jiwei Wang, Shaohua Chi, Yue Liu, Yang Zhao
Nonradiative recombination originating from the defect-rich SnO2/perovskite buried contact and the absorber interior imposes a major constraint on photovoltaic output and device durability. Here, ethylenediaminetetraacetic acid dipotassium salt (EDTA-2K) is inserted as a molecular bridge that modifies the chemical environment and electronic structure on both sides of this buried junction. Its multiple binding sites coordinate with undercoordinated Sn4+ on SnO2 and Pb2+ in the perovskite. In parallel, K+ supplied by EDTA-2K combines with iodide to form KI, while the remaining functional groups interact with halides through hydrogen bonding; together, these effects impede halide migration. This concerted regulation lowers the defect density, relaxes interfacial strain, guides perovskite growth, and produces a more favorable depth distribution of residual PbI2. It also improves interfacial energy alignment and electron extraction. Employing poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) for hole transport enabled the best-performing cell to achieve a power conversion efficiency (PCE) of 24.32%. Following 3000 h of storage, the remaining efficiency exceeds 95% of the starting value; a separate 500 h test under intense ultraviolet (UV) light in ambient air leaves 94.77% of the original PCE. The proposed interfacial architecture thus combines high photovoltaic performance with pronounced resistance to UV-induced aging.