Hui Wang, Xiaochun Zhang, Tianqi Niu, Likun Wang, Xin Yue, Zheng-Hui Wan, Jiang Xiao, Weidong Zhu, Kai Wang, Shengzhong Liu, Chunfu Zhang
Nickel oxide (NiO x ) serves as the preferred hole transporting layer (HTL) for inverted perovskite solar cells (PSCs) due to its good chemical stability and facile solution processability. However, the uncompetitive device performance of PSCs using the pristine NiO x layer has been limited by its intrinsic defect stacking and poor interface contact. Herein, we propose a cooperative interfacial modification strategy to tailor the electronic properties of NiO x by introducing the self-assembled molecule (SAM) interlayer with PABr modification. The SAM molecule can effectively passivate the oxygen vacancies on the surface and regulate the energy level of NiO x by forming an interfacial dipole. In addition, the PABr molecule can further optimize the molecular arrangement of the SAMs and modify the surface wetting of HTLs. The high-quality perovskite film with improved grain sizes and reduced defect density was achieved on the modified NiO x layer, facilitating enhanced charge transport and significantly alleviated nonradiative recombination loss within devices. Consequently, the target device achieved an improved efficiency of 25.13%, outperforming 23.28% of the NiO x . In addition, the 107.0 cm 2 flexible solar modules achieve an impressive efficiency of 16.24%, illustrating the feasibility of the proposed molecular modification for scalable fabrication. Our work underscores the importance of interfacial tailoring on the buried interface to boost the efficiency and stability of PSCs.