Two-Dimensional Tin Perovskite Photoelectric Transistor for High-Performance Photoelectric Controlled MOS Inverter

Two-dimensional (2D) tin (Sn) halide perovskites (HPs) are promising semiconductor materials for environmentally friendly lead-free photoelectric transistors. Herein, 2D perovskites (PEA) 2 MA n –1 Sn n I 3 n +1 are successfully prepared by introducing large phenylethylamine (PEA) cations. The effect of the dimensional structure on the photoelectric performances of (PEA) 2 MA n –1 Sn n I 3 n +1 is investigated. The electrical performances of (PEA) 2 MA n –1 Sn n I 3 n +1 photoelectric transistors are significantly improved by regulating the dimensional microstructure of the perovskites. The (PEA) 2 MA 6 Sn 7 I 22 ( n = 7) photoelectric transistor shows n-type charge transport and excellent electrical properties with a linear mobility of 11.8 cm 2 ·V –1 ·s –1, with a low subthreshold swing (SS) of 0.38 V·decade –1 and a detectivity ( D *) of 2.6 × 10 8 Jones. The standard deviation of performance parameters across 6 batches is less than 0.1 exhibiting a high level of consistency in device performance from batch to batch and good reproducibility. When stored in an N 2 glovebox for 15 days, the electron mobility of the device remained at 5.96 cm 2 ·V –1 ·s –1, confirming their good long-term reliability. Additionally, the photoelectrically controlled metal–oxide–semiconductor (MOS) inverter is constructed by connecting the (PEA) 2 MA 6 Sn 7 I 22 photoelectric transistor with a resistor, thus enabling logic values to be converted via photoelectric control at a low on-power consumption of 18 μW. The gain of the inverter was still maintained at 30 under varying test conditions, exhibiting remarkable stability. The developed high-gain photoelectric controlled MOS inverter with low energy consumption is applicable to portable electronic circuits.