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◆ ACS Applied Engineering Materials2026-04-03· Etching (microfabrication)

Chemical Control of Facet-Selective Photoetching in Wurtzite CdS Photocatalysts

Haruki Nagakawa, Haru Takayama, Yuto Akiba, Shota Ishitsuka, Hiroto Yamane, Ryota Akai, Kouki Oka, Hitoshi Kasai, Yoshio Kobayashi

原始摘要(英文原文)· Original abstract
The photocorrosion of visible-light-responsive photocatalysts is considered detrimental, compromising activity and stability. Although CdS photocorrosion has been extensively reported, most studies focus on performance degradation rather than the underlying facet-dependent mechanisms. Consequently, the origins of facet-selective photocorrosion, the role of solution chemistry (pH, chemical species, and hole-scavenging ability), and the impact of excessive photoetching on photocatalytic activity remain poorly understood. In this study, we demonstrated that the photocorrosion of Pt-loaded wurtzite CdS can be harnessed as a controllable postsynthetic strategy for facet engineering. The photoetching behavior of Pt-loaded CdS photocatalysts was systematically investigated in various aqueous solutions, including lactic acid (LA), acetic acid (AA), sodium lactate (NaLac), and pure water, to elucidate the factors governing facet-selective etching. Distinct etching behaviors were observed depending on solution chemistry. In the LA solution, selective etching predominantly occurred on the Cd-terminated (0001) facet, whereas in AA and pure water, preferential etching of {10–10} and {10–11} side facets was observed. These differences were found to arise from variations in the hole-scavenging ability and coordination chemistry. Insufficient hole scavenging in AA and water led to hole accumulation and corrosion of the side facets, whereas strong chelation of Cd 2+ by LA promoted preferential dissolution of the (0001) facet. Light-intensity-dependent experiments revealed that side-facet etching occurs when the carrier generation rate exceeds the hole-consumption capacity of the solution, highlighting the dynamic balance between carrier generation and consumption as a key determinant of etching selectivity. Controlled photoetching of the (0001) facet of Pt-loaded CdS for a short duration generated shallow surface corrugation, resulting in a 2.7-fold enhancement in hydrogen evolution activity. In contrast, excessive etching caused Pt nanoparticle detachment, increased carrier recombination, and reduced activity. These findings establish solution-controlled photoetching as an effective facet-engineering strategy that transforms photocorrosion from a degradation pathway to a design tool for high-performance semiconductor photocatalysts.
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Chemical Control of Facet-Selective Photoetching in Wurtzite CdS Photocatalysts — 科研速览 Science Skim