Luyang Zhang, Bin Guan, Lei Zhu, Tiankui Zhu, Zhongqi Zhuang, Junyan Chen, Xuehan Hu, Chenyu Zhu, Sikai Zhao, Junjie Gao, Kaiyou Shu, Hongtao Dang, Yuan Li, L.X. Xu, Wenbo Zeng, Daiwen Chen, Linhui Wang, Can Zhu, Jiaming He, Qinghan Xian, Mingyang Yang, Zhen Huang
Metal halide perovskites are being actively studied for optoelectronic applications such as solar cells, light-emitting diodes, photodetectors, and photocatalysis due to their beneficial features such as high absorption coefficients, solution processability, and inexpensive fabrication costs. However, interfacial imperfections, carrier transport losses, nonradiative recombination, ion migration, and dark currents all degrade device performance and inhibit industrialization. This Review systematically explores the physical mechanisms governing perovskite optoelectronic performance and examines the key challenges across these applications. It highlights recent progress in overcoming these challenges through multidimensional material engineering strategies: compositional engineering controlling stoichiometry, additive engineering enhancing crystallization and stability, ligand engineering passivating grain boundaries, and interface engineering optimizing band alignment and morphology. Analysis demonstrates that these synergistic approaches collectively improve device performance metrics by addressing intrinsic limitations and interfacial issues. By comparison of these strategies, the Review provides insights for advancing the field. We conclude that further progress in perovskite technology─driven by a deeper understanding of carrier dynamics, innovative cross-scale structural design, enhanced stability, and sustainable recycling─holds promise for next-generation energy conversion and optoelectronic devices.