Chakradhar Sahoo, Suman Kumar Chakraborty, A. Kousika, Alfred J. H. Jones, Manas Sharma, Thomas S. Nielsen, Zhihao Jiang, Ihsan Ahmed Kolasseri, Subhadip Das, M. D. Watson, Céphise Cacho, Kenji Watanabe, Takashi Taniguchi, Yong P. Chen, Tony F. Heinz, Ananth Govind Rajan, Prasana Kumar Sahoo, Søren Ulstrup
LHSs. By combining nanoARPES with spatially resolved photoluminescence, we correlate the evolution of the valence band maximum and exciton features across both atomically sharp and compositionally graded diffusive interfaces. We identified type-II band alignments governed by both material composition and interstitial-induced modifications of band offsets in close agreement with density functional theory calculations. These results reveal fundamental mechanisms of electronic structure modulation at 1D TMDC heterointerfaces and provide a robust platform for tailored band engineering in van der Waals materials.