Xu Han, TaiYuan Chai, Yuchan Wang, Shiji Zhao, Ting Chen, Wenxia Zhang, Kailiang Zhang
Driven by the demand for device multifunctionality in fields such as neuromorphic computing, biomimetic sensing, and information security, memristors have become a research focus due to their dual capabilities of data storage and signal processing. Herein, a Cs 3 BiBr 6 lead-free perovskite memristor with a sandwich structure of Ag/PMMA/Cs 3 BiBr 6 /ITO is fabricated and systematically investigated. Under a low current compliance of 1 mA, the device demonstrates stable bipolar resistive switching behavior, including over 800 switching cycles, an average on/off ratio greater than 20, and good data retention. At 10 mA, random high-resistance state distribution enables construction of a true random number array. The switching mechanism is dominated by Ag atoms and bromide vacancies driving conductive filaments fracture-regeneration. Moreover, the device emulates the nociceptor function in biological systems, achieving graded stimulus discrimination and postinjury hyperalgesia reproduction. Additionally, OR/AND/XOR logic gates are constructed via bipolar resistive switching, with digital information and image encryption/decryption realized via the integration of the random key matrix.