Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov, Noiba U. Botirova, Ra’no Sh. Sharipova, Javohir Sh. Khudoykulov
This study investigates the negative differential resistance (NDR) effect in Co:SnO 2 memristors fabricated using the ultrasonic spray pyrolysis (USP) method on p-Si/SiO 2 substrates. The memristor devices, with a structure of p-Si/SiO 2 /Co:SnO 2, exhibit distinct NDR behavior in their current–voltage ( I – V ) characteristics, characterized by a region of decreasing current with increasing voltage. Furthermore, the Tauc plot method is employed to determine the changes in the optical band gap of the Co:SnO 2 material. This work focuses on evaluating the nanocluster size within the Co:SnO 2 film, alongside changes in the optical band gap, and their potential relationship to the observed NDR effect. The results reveal a correlation between nanocluster characteristics, optical band gap variations, and NDR behavior, offering insights into charge transport mechanisms in these devices. This study contributes to the understanding of NDR in metal oxide memristors and offers potential avenues for tailoring device performance through nanostructural and electronic property control.