Electrical performance of n-β-Ga₂O₃/p-GaN heterojunction diodes

In this work, a n-β-Ga₂O₃/p-GaN heterojunction diode was fabricated and investigated by integrating p-type GaN with n-type β-Ga₂O₃, thereby overcoming the intrinsic limitation of achieving stable p-type doping in this material. The β-Ga₂O₃ layers were grown on the GaN templates on sapphire substrate by metalorganic chemical vapor deposition, forming a sharp heterojunction interface. The fabricated devices exhibited clear rectifying behavior with a turn-on voltage of approximately 3.2 V and an specific on-resistance of 31.2 Ω·cm 2 . By employing a finger-pattern layout, the ideality factor is improved from 2.89 to 1.85, and the breakdown voltage is enhanced from 522 V to 645 V, indicating uniform current spreading and electric-field distribution. In addition, performed TCAD simulations support the experimental results and confirm that the developed n-β-Ga₂O₃/p-GaN heterojunction exhibit the intrinsic properties and electrical characteristics suitable for high-voltage power electronic applications.