Interface engineering of 4H-SiC-based UV photodetectors: A comprehensive review

Ultraviolet (UV) photodetectors based on wide-bandgap semiconductors are essential for next-generation sensing technologies operating in harsh and energy-limited environments. Because of its wide bandgap (3.26 eV), high thermal conductivity, and radiation tolerance, 4H-silicon carbide (4H-SiC) provides an ideal material foundation for realizing self-powered and deep-UV detection . However, the performance of these devices is often constrained by intrinsic defects, interface states, and recombination losses that limit charge transport and long-term stability, underscoring the urgent need for interface-driven design strategies. This review provides a comprehensive, mechanism-based overview of recent progress in self-powered 4H-SiC UV photodetectors, emphasizing interface engineering through heterostructure design, dielectric integration, and incorporation of carbon-based and 2D materials enables enhanced carrier separation, spectral selectivity, and device reliability. This work uniquely establishes quantitative correlations between interface properties and device figures of merit , highlights emerging architecture such as avalanche and phototransistor configurations , and discusses their scalability and integration prospects for autonomous UV sensing systems. By bridging material science, device physics, and system-level functionality, this review defines a unified framework for achieving high-efficiency, self-powered, and environmentally resilient 4H-SiC photodetectors, guiding future research toward scalable and intelligent UV detection technologies.